The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 2021

Filed:

Nov. 04, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chien-Hsing Lee, Taipei, TW;

Chih-Sheng Chang, Hsinchu, TW;

Wilman Tsai, Saratoga, CA (US);

Chia-Wen Chang, Taipei, TW;

Ling-Yen Yeh, Hsinchu, TW;

Carlos H. Diaz, Mountain View, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 27/11 (2006.01); H01L 27/092 (2006.01); H01L 21/28 (2006.01); H01L 29/16 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/516 (2013.01); H01L 27/0924 (2013.01); H01L 27/1104 (2013.01); H01L 29/16 (2013.01); H01L 29/401 (2013.01); H01L 29/40114 (2019.08); H01L 29/511 (2013.01); H01L 29/6684 (2013.01); H01L 29/785 (2013.01); H01L 29/7839 (2013.01); H01L 29/66545 (2013.01);
Abstract

A semiconductor device includes a first potential supply line for supplying a first potential, a second potential supply line for supplying a second potential lower than the first potential, a functional circuit, and at least one of a first switch disposed between the first potential supply line and the functional circuit and a second switch disposed between the second potential supply line and the functional circuit. The first switch and the second switch are negative capacitance FET.


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