The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2021
Filed:
Jun. 01, 2018
Micron Technology, Inc., Boise, ID (US);
Michael J. Gossman, Meridian, ID (US);
M. Jared Barclay, Middleton, ID (US);
Matthew J. King, Boise, ID (US);
Eldon Nelson, Dripping Springs, TX (US);
Matthew Park, Boise, ID (US);
Jason Reece, Boise, ID (US);
Lifang Xu, Boise, ID (US);
Bo Zhao, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A method used in forming integrated circuitry comprises forming a stack of vertically-alternating tiers of different composition materials. A stair-step structure is formed into the stack and an upper landing is formed adjacent and above the stair-step structure. The stair-step structure is formed to comprise vertically-alternating tiers of the different composition materials. A plurality of stairs individually comprise two of the tiers of different composition materials. At least some of the stairs individually have only two tiers that are each only of a different one of the different composition materials. An upper of the stairs that is below the upper landing comprises at least four of the tiers of different composition materials. Structure independent of method is disclosed.