The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 2021

Filed:

Jun. 26, 2019
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Banqiu Wu, San Jose, CA (US);

Khalid Makhamreh, Los Gatos, CA (US);

Eli Dagan, Sunnyvale, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/66 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 22/26 (2013.01); H01L 21/02057 (2013.01); H01L 21/31138 (2013.01);
Abstract

Methods and apparatus for removing a photoresist layer from a photomask substrate are provided. In one example, a method for removing a photoresist layer from a substrate in a chamber includes generating a first plasma including first radicals from a first gas mixture in a processing chamber, exposing a portion of a photoresist layer on a substrate to the first radicals to remove the portion of the photoresist layer from the substrate, generating a second plasma including second radicals from a second gas mixture, wherein the second radicals have a different composition than the first radicals, and exposing another portion of photoresist layer to the second radicals to remove the second portion of the photoresist layer.


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