The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2021
Filed:
Nov. 21, 2019
Applied Materials, Inc., Santa Clara, CA (US);
Gaurav Thareja, Santa Clara, CA (US);
Takashi Kuratomi, San Jose, CA (US);
Avgerinos V. Gelatos, Scotts Valley, CA (US);
Xianmin Tang, San Jose, CA (US);
Sanjay Natarajan, Portland, OR (US);
Keyvan Kashefizadeh, Dublin, CA (US);
Zhebo Chen, San Jose, CA (US);
Jianxin Lei, Fremont, CA (US);
Shashank Sharma, Fremont, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Embodiments disclosed herein include a processing system and a method of forming a contact. The processing system includes a plurality of process chambers configured to deposit, etch, and/or anneal a source/drain region of a substrate. The method includes depositing a doped semiconductor layer over a source/drain region, forming an anchor layer in a trench, and depositing a conductor in the trench. The method of forming a contact results in reduced contact resistance by using integrated processes, which allows various operations of the source/drain contact formation to be performed within the same processing system.