The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2021
Filed:
Feb. 13, 2018
Applicant:
Tdk Corporation, Tokyo, JP;
Inventors:
Koichi Tsunoda, Tokyo, JP;
Mitsuhiro Tomikawa, Tokyo, JP;
Kazuhiro Yoshikawa, Tokyo, JP;
Kenichi Yoshida, Tokyo, JP;
Assignee:
TDK Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/33 (2006.01); H01G 4/012 (2006.01); H01G 4/252 (2006.01); H01G 4/30 (2006.01);
U.S. Cl.
CPC ...
H01G 4/33 (2013.01); H01G 4/012 (2013.01); H01G 4/252 (2013.01); H01G 4/306 (2013.01);
Abstract
In a thin-film capacitor, an electrode terminal layer and an electrode layer of a capacitor portion are connected to electrode terminals by via conductors that is formed to penetrate an insulating layer in a thickness direction thereof, and a short circuit wiring in the thickness direction is realized by the via conductors. In the thin-film capacitor, an increase in the number of terminals in the plurality of electrode terminals is achieved, a decrease in length of a circuit wiring is achieved, and thus a thin-film capacitor with low-ESL has been achieved.