The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2021
Filed:
Nov. 25, 2019
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Alexander Reznicek, Troy, NY (US);
Eric Raymond Evarts, Niskayuna, NY (US);
Virat Vasav Mehta, Menands, NY (US);
Bahman Hekmatshoartabari, White Plains, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01); H01L 27/22 (2006.01); H01S 5/183 (2006.01); H01S 5/343 (2006.01); H01L 43/02 (2006.01); H01F 41/34 (2006.01); H01S 5/026 (2006.01); H01L 23/00 (2006.01); H01L 43/12 (2006.01); H01F 10/32 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1695 (2013.01); G11C 11/161 (2013.01); G11C 11/1675 (2013.01); H01F 41/34 (2013.01); H01L 23/576 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/12 (2013.01); H01S 5/0261 (2013.01); H01S 5/183 (2013.01); H01S 5/34313 (2013.01); H01F 10/3254 (2013.01); H01F 10/3286 (2013.01); H01L 43/10 (2013.01);
Abstract
An erasable magnetoresistive random-access memory (MRAM) structure and a method of making the same includes an MRAM cell disposed between bit line and word line circuit elements, and a vertical-cavity surface-emitting laser (VCSEL) element disposed above the MRAM cell. A laser output of the VCSEL is directed toward the MRAM cell.