The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2021
Filed:
May. 13, 2020
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Andre P. LaBonte, Mechanicville, NY (US);
Ludovic Godet, Sunnyvale, CA (US);
Rutger Meyer Timmerman Thijssen, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); G03F 7/20 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/302 (2006.01); G02B 5/18 (2006.01); G02B 27/01 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0035 (2013.01); G02B 5/1857 (2013.01); G03F 7/0005 (2013.01); G03F 7/2043 (2013.01); H01L 21/302 (2013.01); H01L 21/3065 (2013.01); H01L 21/311 (2013.01); H01L 21/31111 (2013.01); G02B 27/0172 (2013.01); G02B 2027/0174 (2013.01);
Abstract
A method for forming a device structure is disclosed. The method of forming the device structure includes forming a variable-depth structure in a device material layer using cyclic-etch process techniques. A plurality of device structures is formed in the variable-depth structure to define vertical or slanted device structures therein. The variable-depth structure and the vertical or slanted device structures are formed using an etch process.