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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11111139 B1

PDFFull Text
Expired
Date of Patent:
Sep. 07, 2021

Filed:

Sep. 30, 2019

Planar cavity mems and related structures, methods of manufacture and design structures

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Christopher V. Jahnes, Upper Saddle River, NJ (US);

Anthony K. Stamper, Burlington, VT (US);

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

Attorneys:

L. Jeffrey Kelly

Andrew M. Calderon

Roberts Calderon Safran & Cole, P.C.

Primary Examiner:

Dean O Takaoka

Int. Cl.
CPC ...
B81C 1/00 (2006.01); B81B 3/00 (2006.01); H01L 41/113 (2006.01); H01H 57/00 (2006.01); H01H 1/00 (2006.01); H01P 1/12 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00666 (2013.01); B81C 1/0015 (2013.01); B81C 1/00365 (2013.01); B81C 1/00476 (2013.01); B81C 1/00619 (2013.01); B81C 1/00626 (2013.01); H01H 1/0036 (2013.01); H01H 57/00 (2013.01); H01L 41/1136 (2013.01); B81C 2201/013 (2013.01); B81C 2201/017 (2013.01); B81C 2201/0167 (2013.01); B81C 2203/0136 (2013.01); B81C 2203/0172 (2013.01); H01L 2924/0002 (2013.01); Y10S 438/937 (2013.01); Y10T 29/42 (2015.01); Y10T 29/435 (2015.01); Y10T 29/49002 (2015.01); Y10T 29/4913 (2015.01); Y10T 29/49105 (2015.01); Y10T 29/49121 (2015.01); Y10T 29/49126 (2015.01); Y10T 29/49155 (2015.01); Y10T 29/5313 (2015.01);
Abstract

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

Find Patent Forward Citations

Jahnes, Christopher. (2021). Planar cavity mems and related structures, methods of manufacture and design structures (U.S. Patent No. 11111139). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11111139

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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