The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2021
Filed:
Dec. 03, 2019
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Valter Soncini, Sesto San Giovanni, IT;
Davide Erbetta, Vimercate, IT;
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); G11C 11/5678 (2013.01); G11C 11/5685 (2013.01); H01L 27/2427 (2013.01); H01L 27/2463 (2013.01); H01L 45/00 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/122 (2013.01); H01L 45/1233 (2013.01); H01L 45/14 (2013.01); H01L 45/143 (2013.01); H01L 45/144 (2013.01); H01L 45/148 (2013.01); H01L 45/16 (2013.01); H01L 45/1625 (2013.01);
Abstract
Phase change memory cells, structures, and devices having a phase change material and an electrode forming an ohmic contact therewith are disclosed and described. Such electrodes can have a resistivity of from 10 to 100 mOhm·cm.