The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 31, 2021

Filed:

Jun. 30, 2017
Applicant:

Flosfia Inc., Kyoto, JP;

Inventors:

Tomochika Tanikawa, Kyoto, JP;

Toshimi Hitora, Kyoto, JP;

Assignee:

FLOSFIA INC., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/12 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 21/02565 (2013.01); H01L 29/12 (2013.01); H01L 29/78 (2013.01); H01L 29/786 (2013.01);
Abstract

A new and useful oxide semiconductor film with enhanced p-type semiconductor property and the method of manufacturing the oxide semiconductor film are provided. A method of manufacturing an oxide semiconductor film including: generating atomized droplets by atomizing a raw material solution containing a metal of Group 9 of the periodic table and/or a metal of Group 13 of the periodic table and a p-type dopant; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under oxygen atmosphere to form the oxide semiconductor film on the base.


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