The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 31, 2021

Filed:

Sep. 15, 2019
Applicant:

Wuhan Xinxin Semiconductor Manufacturing Co., Ltd., Wuhan, CN;

Inventors:

Peng Sun, Wuhan, CN;

Xilong Wang, Wuhan, CN;

Sheng Hu, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14698 (2013.01); H01L 27/1464 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01);
Abstract

A manufacturing method of an image sensing device includes the following steps. A substrate is provided. At least one image sensing unit is disposed in the substrate. A passivation layer is formed on the substrate. An auxiliary layer is formed on the passivation layer. A material composition of the auxiliary layer is different from a material composition of the passivation layer. An annealing process is performed to the substrate and the passivation layer. The passivation layer is covered by the auxiliary layer during the annealing process. The auxiliary layer is removed after the annealing process. The ability to constrain and/or passivate free charge in and/or near the passivation layer may be enhanced by performing the annealing process with the auxiliary layer covering the passivation layer. The electrical performance of the image sensing device may be improved accordingly.


Find Patent Forward Citations

Loading…