The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2021
Filed:
Jun. 23, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Hung-Shu Huang, Taichung, TW;
Ming Chyi Liu, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); H01L 27/11556 (2017.01); H01L 29/423 (2006.01); H01L 27/1158 (2017.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); G11C 16/0416 (2013.01); H01L 27/1158 (2013.01); H01L 29/42332 (2013.01); H01L 29/42336 (2013.01); H01L 29/66825 (2013.01);
Abstract
The present disclosure relates to a flash memory structure. The flash memory structure includes a first doped region and a second doped region disposed within a substrate. A select gate is disposed over the substrate between the first doped region and the second doped region. A floating gate is disposed over the substrate between the select gate and the first doped region, and a control gate is over the floating gate. The floating gate extends along multiple surfaces of the substrate.