The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2021
Filed:
Sep. 05, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A FinFET device structure is provided. The FinFET device structure includes a fin structure formed over a substrate, and the substrate includes a first region and a second region. A gate structure is formed over a fin structure and a first S/D structure has a first volume. A second S/D structure has a second volume, and the second volume is lower than the first volume. A first contact structure is formed over the first S/D structure and a first conductive via is formed over the first contact structure. A power line is formed over the first conductive via, and the power line is electrically connected to the first S/D structure by the first conductive via and the first contact structure.