The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2021
Filed:
May. 10, 2020
Applicants:
Zhanming LI, West Vancouver, CA;
Yue Fu, Coquitlam, CA;
Yan-fei Liu, Kingston, CA;
Inventors:
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49562 (2013.01); H01L 23/4952 (2013.01); H01L 23/49568 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 24/92 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48245 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/92247 (2013.01);
Abstract
Packaging methods and structures for lateral high voltage gallium nitride (GaN) devices achieve electrical isolation while also maintaining thermal dissipation. The electrical isolation reduces or eliminates vertical leakage current, improving high voltage performance. The packages may use or be compatible standards such as JEDEC, which reduces packaging cost and facilitates implementation of the packaged devices in conventional circuit design approaches.