The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 31, 2021

Filed:

Jan. 12, 2017
Applicant:

Sumitomo Osaka Cement Co., Ltd., Tokyo, JP;

Inventors:

Nobuhiro Hidaka, Tokyo, JP;

Hironori Kugimoto, Tokyo, JP;

Mamoru Kosakai, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/683 (2006.01); C04B 35/103 (2006.01); C04B 35/111 (2006.01); C04B 35/626 (2006.01); H01L 21/687 (2006.01); C04B 35/117 (2006.01); C04B 35/645 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6833 (2013.01); C04B 35/103 (2013.01); C04B 35/111 (2013.01); C04B 35/117 (2013.01); C04B 35/6261 (2013.01); C04B 35/62635 (2013.01); C04B 35/62645 (2013.01); C04B 35/62655 (2013.01); C04B 35/62695 (2013.01); C04B 35/645 (2013.01); H01L 21/68757 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3826 (2013.01); C04B 2235/3834 (2013.01); C04B 2235/40 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/5454 (2013.01); C04B 2235/604 (2013.01); C04B 2235/656 (2013.01); C04B 2235/658 (2013.01); C04B 2235/6583 (2013.01); C04B 2235/725 (2013.01); C04B 2235/9669 (2013.01);
Abstract

An electrostatic chuck device includes: a base having one principal surface which is a placing surface on which a plate-shaped sample is placed, wherein the base is made from a sintered compact of ceramic particles, which include silicon carbide particles and aluminum oxide particles, as a forming material; and an electrostatic attraction electrode which is provided on a surface of the base on the side opposite to the placing surface of the base, or in the interior of the base, in which the volume resistivity value of the sintered compact is 0.5×10Ωcm or more in the entire range from 24° C. to 300° C., a graph which shows the relationship of the volume resistivity value of the sintered compact to a temperature at which the volume resistivity value of the sintered compact is measured has a maximum value in the range from 24° C. to 300° C., and the amount of metal impurities in the sintered compact other than aluminum and silicon in the sintered compact is 100 ppm or less.


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