The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 31, 2021

Filed:

Oct. 18, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Kelley D. Dobelstein, Seattle, WA (US);

Jason T. Zawodny, Eagle, ID (US);

Kyle B. Wheeler, Meridian, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/12 (2006.01); G11C 7/10 (2006.01); G11C 11/4076 (2006.01); G11C 11/4074 (2006.01); G06F 12/06 (2006.01); G11C 11/408 (2006.01); G11C 11/4096 (2006.01); G06F 13/16 (2006.01);
U.S. Cl.
CPC ...
G11C 7/1006 (2013.01); G06F 12/06 (2013.01); G06F 13/1668 (2013.01); G11C 7/1015 (2013.01); G11C 8/12 (2013.01); G11C 11/408 (2013.01); G11C 11/4074 (2013.01); G11C 11/4076 (2013.01); G11C 11/4096 (2013.01); G06F 2212/1028 (2013.01); G11C 2207/2209 (2013.01); Y02D 10/00 (2018.01);
Abstract

Apparatuses and methods related to memory bank power coordination in a memory device are disclosed. A method for memory bank power coordination may include concurrently performing a memory operation by a threshold number of memory regions, such as banks or subarrays, and executing a command to cause a budget area, such as a register, to perform a power budget operation associated with the memory operation. The threshold number of memory regions may be set based at least in part on a threshold power consumption value, and the number of memory regions to concurrently perform an operation may be controlled by a bank arbiter. A counter having a value representing the threshold number of memory regions may be decremented while performing an operation or incremented upon completion of an operation associated with one of the memory regions. A number of the memory regions may be selected to perform a processing-in-memory operation.


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