The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 31, 2021

Filed:

Jul. 02, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Yung-Hsu Chuang, Hsinchu, TW;

Wen-Shen Chou, Zhubei, TW;

Yung-Chow Peng, Hsinchu, TW;

Yu-Tao Yang, Zhubei, TW;

Yun-Ru Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/398 (2020.01); G03F 1/82 (2012.01); G03F 1/36 (2012.01);
U.S. Cl.
CPC ...
G06F 30/398 (2020.01); G03F 1/36 (2013.01); G03F 1/82 (2013.01);
Abstract

A method including the operations of receiving a preliminary device layout including a plurality of active areas, analyzing the preliminary device layout to identify empty areas between the plurality of active areas, determining the configurations of the active areas bordering the empty areas, selecting a transition cell from a transition cell library in which the transition cell has a transitional configuration for reducing density gradient effects in the active areas adjacent the transition cell, and inserting the transition cells into the empty areas to define a modified device layout.


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