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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11101361 B1

PDFFull Text
Date of Patent:
Aug. 24, 2021

Filed:

May. 28, 2020

Gate-all-around (gaa) transistor and method of fabricating the same

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Zhaoyao Zhan, Singapore, SG;

Qianwei Ding, Singapore, SG;

Xiaohong Jiang, Singapore, SG;

Ching Hwa Tey, Singapore, SG;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorney:

Winston Hsu

Primary Examiner:

Cheung Lee

Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 29/76 (2006.01); H01L 29/16 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42392 (2013.01); H01L 21/02603 (2013.01); H01L 21/76267 (2013.01); H01L 21/76283 (2013.01); H01L 29/0649 (2013.01); H01L 29/0673 (2013.01); H01L 29/41733 (2013.01); H01L 29/66045 (2013.01); H01L 29/78696 (2013.01); H01L 21/02527 (2013.01); H01L 21/02568 (2013.01); H01L 29/1606 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/7606 (2013.01);
Abstract

A GAA transistor includes a semiconductor substrate. A first shallow trench isolation (STI) is embedded in the semiconductor substrate. A top surface of the first STI is lower than a top surface of the semiconductor substrate. A nanowire crosses the first STI and is disposed on the first STI. A gate structure contacts and wraps around the nanowire. A source electrode contacts a first end of the nanowire. A drain electrode contacts a second end of the nanowire.

Find Patent Forward Citations

Zhan, Zhaoyao. (2021). Gate-all-around (gaa) transistor and method of fabricating the same (U.S. Patent No. 11101361). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11101361

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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