The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 24, 2021

Filed:

Apr. 16, 2020
Applicant:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Inventors:

Ryan Hatcher, Austin, TX (US);

Titash Rakshit, Austin, TX (US);

Jorge Kittl, Garland, TX (US);

Rwik Sengupta, Austin, TX (US);

Dharmendar Palle, Austin, TX (US);

Joon Goo Hong, Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/15 (2006.01); H01L 27/22 (2006.01); G11C 11/16 (2006.01); G11C 13/00 (2006.01); H01F 10/32 (2006.01); H01L 43/02 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); H01F 10/329 (2013.01); H01F 10/3259 (2013.01); H01L 27/2436 (2013.01); H01L 43/02 (2013.01); G11C 2013/0045 (2013.01); G11C 2013/0078 (2013.01);
Abstract

A weight cell, an electronic device and a device are provided. The weight cell includes a first resistive memory element and a second resistive memory element, a select transistor, and a layer of Spin Hall (SH) material disposed between the first resistive memory element and the second resistive memory element, the layer of the SH material including a first contact and a second contact. The first contact of the SH material is connected to a drain of the select transistor and the second contact of the SH material is connected to an external word line.


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