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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11101219 B1

PDFFull Text
Expired
Date of Patent:
Aug. 24, 2021

Filed:

Jan. 25, 2019

Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type iv semiconductor elements

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

John Bruley, Poughkeepsie, NY (US);

Jack O. Chu, Manhasset Hills, NY (US);

Kam-Leung Lee, Putnam Valley, NY (US);

Ahmet S. Ozcan, San Jose, CA (US);

Paul M. Solomon, Yorktown Heights, NY (US);

Jeng-bang Yau, Yorktown Heights, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Tutunjian & Bitetto, P.C.

Kurt Goudy

Primary Examiner:

Marcos D Pizarro

Assistant Examiner:

Sue Tang

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/535 (2006.01); H01L 23/532 (2006.01); H01L 29/78 (2006.01); C22C 30/00 (2006.01); H01L 23/485 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); C22C 30/00 (2013.01); H01L 21/2855 (2013.01); H01L 21/28518 (2013.01); H01L 21/76805 (2013.01); H01L 21/76843 (2013.01); H01L 21/76846 (2013.01); H01L 21/76858 (2013.01); H01L 21/76864 (2013.01); H01L 21/76895 (2013.01); H01L 23/485 (2013.01); H01L 23/53223 (2013.01); H01L 23/53266 (2013.01); H01L 29/7851 (2013.01); H01L 23/53209 (2013.01); H01L 23/53238 (2013.01); H01L 23/53252 (2013.01);
Abstract

A method of forming a contact to a semiconductor device is provided that forms an alloy composed of nickel (Ni), platinum (Pt), aluminum (Al), titanium (Ti) and a semiconductor material. The methods may include forming a nickel and platinum semiconductor alloy at a base of a via. A titanium layer having an angstrom scale thickness is deposited in the via in contact with the nickel platinum semiconductor alloy. An aluminum containing fill is deposited atop the titanium layer. A forming gas anneal including an oxygen containing atmosphere is applied to the structure to provide a contact alloy comprising nickel, platinum, aluminum, titanium and a semiconductor element from the contact surface of the semiconductor device.

Find Patent Forward Citations

Bruley, John. (2021). Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type iv semiconductor elements (U.S. Patent No. 11101219). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11101219

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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