The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2021
Filed:
May. 20, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/82 (2006.01); H01L 27/08 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 21/02 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823462 (2013.01); H01L 21/02238 (2013.01); H01L 21/02282 (2013.01); H01L 21/823431 (2013.01); H01L 21/823468 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 21/823857 (2013.01); H01L 27/0886 (2013.01); H01L 27/092 (2013.01); H01L 27/0924 (2013.01); H01L 27/0928 (2013.01);
Abstract
A method including forming a first insulating film over a first fin structure. The method further includes removing the first insulating film to expose a portion of the first fin structure. The method further includes forming a first oxide film over the exposed portion of the first fin structure using a non-aqueous solvent-based chemical.