The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 24, 2021

Filed:

Oct. 15, 2019
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Hao Jiang, San Jose, CA (US);

Nikolaos Bekiaris, Campbell, CA (US);

Erica Chen, Cupertino, CA (US);

Mehul B. Naik, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/768 (2006.01); H01L 21/762 (2006.01); H01L 21/285 (2006.01); H01L 21/02 (2006.01); H01L 21/30 (2006.01); H01L 21/324 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76879 (2013.01); H01L 21/02301 (2013.01); H01L 21/28556 (2013.01); H01L 21/3003 (2013.01); H01L 21/324 (2013.01); H01L 21/32136 (2013.01); H01L 21/76224 (2013.01);
Abstract

Methods for forming an interconnections structure on a substrate in a cluster processing system and thermal processing such interconnections structure are provided. In one embodiment, a method for a device structure for semiconductor devices includes forming a barrier layer in an opening formed in a material layer disposed on a substrate, forming an interface layer on the barrier layer, forming a gap filling layer on the interface layer, and performing an annealing process on the substrate, wherein the annealing process is performed at a pressure range greater than 5 bar.


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