The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 24, 2021

Filed:

Mar. 20, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Jeremy Miles Hirst, Orangevale, CA (US);

Hernan A. Castro, Shingle Springs, CA (US);

Stephen Tang, Fremont, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 7/06 (2006.01); G11C 7/12 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 7/06 (2013.01); G11C 7/12 (2013.01); G11C 13/0004 (2013.01); G11C 13/0038 (2013.01); G11C 13/0059 (2013.01); G11C 13/0061 (2013.01); G11C 13/0069 (2013.01); G11C 2013/0083 (2013.01); G11C 2207/063 (2013.01);
Abstract

Example subject matter disclosed herein relates to apparatuses and/or devices, and/or various methods for use therein, in which an application of an electric potential to a circuit may be initiated and subsequently changed in response to a determination that a snapback event has occurred in a circuit. For example, a circuit may comprise a memory cell that may experience a snapback event as a result of an applied electric potential. In certain example implementations, a sense circuit may be provided which is responsive to a snapback event occurring in a memory cell to generate a feed back signal to initiate a change in an electric potential applied to the memory cell.


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