The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2021
Filed:
Mar. 19, 2020
Shanghai Institute of Technical Physics of the Chinese Academy of Sciences, Shanghai, CN;
Jianlu Wang, Shanghai, CN;
Guangjian Wu, Shanghai, CN;
Xudong Wang, Shanghai, CN;
Hong Shen, Shanghai, CN;
Tie Lin, Shanghai, CN;
Xiangjian Meng, Shanghai, CN;
Junhao Chu, Shanghai, CN;
Abstract
A ferroelectric domain regulated optical readout mode memory and a preparing method thereof. The memory has such a structure that a two-dimensional semiconductor and a ferroelectric film layer are sequentially arranged on a conductive substrate. The method for preparing the memory includes the steps of preparing the two-dimensional semiconductor on the conductive substrate, preparing a ferroelectric film, then writing a periodic positive-reverse domain structure into the ferroelectric film on the two-dimensional semiconductor by using a piezoresponse force microscopy technology, and regulating a photoluminescent intensity of the two-dimensional semiconductor WSby using a ferroelectric domain. A fluorescent picture taken by a fluorescent camera shows light and dark areas corresponding to polarization directions, the light and dark areas represent an on state ('1') and an off state ('0') of the memory respectively, and accordingly the purpose of storage is achieved.