The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Nov. 27, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chun-Hsiung Tsai, Hsinchu County, TW;
Kei-Wei Chen, Tainan, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66636 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/7848 (2013.01);
Abstract
A structure includes a semiconductor substrate, a source epitaxial structure, a drain epitaxial structure, and a gate stack. The source epitaxial structure is in the semiconductor substrate. The source epitaxial structure has a top surface, and the top surface of the source epitaxial structure comprises hydrogen. The drain epitaxial structure is in the semiconductor substrate. The gate stack is over the semiconductor substrate and between the source epitaxial structure and the drain epitaxial structure.