The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 17, 2021

Filed:

Jun. 05, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chi-Cheng Chen, Tainan, TW;

Wei-Li Huang, Pingtung, TW;

Chun-Yi Wu, Tainan, TW;

Kuang-Yi Wu, Changhua County, TW;

Hon-Lin Huang, Hsinchu, TW;

Chih-Hung Su, Tainan, TW;

Chin-Yu Ku, Hsinchu, TW;

Chen-Shien Chen, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/677 (2006.01); H01L 49/02 (2006.01); H01F 41/04 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 23/31 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 28/10 (2013.01); H01F 41/046 (2013.01); H01L 21/76823 (2013.01); H01L 23/3114 (2013.01); H01L 23/3171 (2013.01); H01L 23/53204 (2013.01); H01L 24/05 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/04073 (2013.01); H01L 2224/05 (2013.01);
Abstract

A structure and a formation method of a semiconductor device are provided. The method includes forming a passivation layer over a semiconductor substrate. The method also includes forming a magnetic element over the passivation layer. The method further includes forming an isolation layer over the magnetic element and the passivation layer. The isolation layer includes a polymer material. In addition, the method includes forming a conductive line over the isolation layer, and the conductive line extends across the magnetic element.


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