The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 17, 2021

Filed:

Sep. 04, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jung Soo Kim, Suwon-si, KR;

Pyung Hwa Han, Suwon-si, KR;

Sung Hawn Bae, Suwon-si, KR;

Jin Won Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 25/16 (2006.01); H01L 23/13 (2006.01); H01L 21/683 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 24/20 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/568 (2013.01); H01L 21/6836 (2013.01); H01L 23/13 (2013.01); H01L 23/3128 (2013.01); H01L 23/3135 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49838 (2013.01); H01L 24/19 (2013.01); H01L 25/16 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2924/19102 (2013.01);
Abstract

A semiconductor package includes: a connection structure having first and second surfaces opposing each other and including a redistribution layer; a semiconductor chip disposed on the first surface of the connection structure and having connection pads connected to the redistribution layer; an encapsulant disposed on the first surface of the connection structure and encapsulating the semiconductor chip; a passivation layer disposed on the second surface of the connection structure and having a plurality of first and second openings exposing, respectively, first and second regions of the redistribution layer; and a plurality of underbump metal layers connected to the first region of the redistribution layer through the plurality of first openings, respectively.


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