The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 17, 2021

Filed:

May. 21, 2018
Applicant:

Sumco Corporation, Tokyo, JP;

Inventors:

Bong-Gyun Ko, Tokyo, JP;

Kousuke Takata, Tokyo, JP;

Assignee:

SUMCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 22/20 (2013.01); H01L 21/324 (2013.01);
Abstract

Provided is a method capable of predicting the warpage caused when a silicon wafer is subjected to heat treatment taking into account the effect of oxygen and a method of producing a silicon wafer. The method includes: determining the mobile dislocation density, the stress, and the time evolution of the strain of the silicon wafer being subjected to heat treatment from the rate of change in the strain and the rate of change in the mobile dislocation density; and determining the magnitude of plastic deformation of the silicon wafer as a warpage. The mobile dislocation density Nat the start of the heat treatment is given as:×(Δ)  (1),


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