The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 17, 2021

Filed:

Sep. 05, 2019
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Shi You, San Jose, CA (US);

He Ren, San Jose, CA (US);

Mehul B. Naik, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76879 (2013.01); H01L 21/76831 (2013.01); H01L 23/5226 (2013.01); H01L 23/53228 (2013.01); H01L 21/28562 (2013.01); H01L 21/28568 (2013.01); H01L 23/53214 (2013.01); H01L 23/53257 (2013.01);
Abstract

Embodiments of the present disclosure generally relate an interconnect structure formed on a substrate and a method of forming the interconnect structure thereon. In one embodiment, a method of forming an interconnect structure includes forming an opening comprising a via and a trench in an insulating structure formed on a substrate, forming a first passivation layer in the opening, removing a portion of the first passivation layer from the opening, and selectively depositing a first metal containing material in the via.


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