The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
May. 22, 2019
Nanya Technology Corporation, New Taipei, TW;
Li-Han Lu, New Taipei, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
A semiconductor structure and a method for manufacturing the same are disclosed. The semiconductor structure includes a semiconductor substrate, a multi-layer stack, a switch device, and an air void. The multi-layer stack is buried in the semiconductor substrate. The multi-layer stack includes a first filling layer and a second filling layer under the first filling layer, the first filling layer has a first etching rate, the second filling layer has a second etching rate, and the first etching rate and the second etching rate are different. The switch device is disposed over the semiconductor substrate. The air void is formed in the multi-layer stack and under the switch device. The air void is surrounded by dielectric filling material.