The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 17, 2021

Filed:

Dec. 31, 2014
Applicant:

Rohm and Haas Electronic Materials Korea Ltd., Chungcheongnam-Do, KR;

Inventors:

Jihoon Kang, Gyeonggi-do, KR;

Hye-Won Lee, Gyeonggi-do, KR;

Seung Uk Lee, Seoul, KR;

Sook Lee, Seoul, KR;

Jae-Bong Lim, Chungcheongnam-do, KR;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/32 (2006.01); G03F 7/20 (2006.01); G03F 7/38 (2006.01); G03F 7/09 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01); G03F 7/004 (2006.01);
U.S. Cl.
CPC ...
G03F 7/325 (2013.01); G03F 7/0045 (2013.01); G03F 7/0382 (2013.01); G03F 7/0392 (2013.01); G03F 7/091 (2013.01); G03F 7/2041 (2013.01); G03F 7/38 (2013.01);
Abstract

The present invention relates to a method for forming a pattern by negative tone development (NTD) which is prepared by forming an anti-reflective coating composition layer comprising a photoacid generator between the substrate and the photoresist composition layer, and thus exhibits improved line width (CD) in the pattern and prevents pattern collapse owing to thorough activation of de-blocking of the photoresist composition layer during the exposure process.


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