The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 17, 2021

Filed:

Jul. 09, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Santiago Serrano Guisan, San Jose, CA (US);

Luc Thomas, San Jose, CA (US);

Son Le, Gilroy, CA (US);

Guenole Jan, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/00 (2006.01); G01R 33/60 (2006.01); G01R 33/345 (2006.01); G01R 31/3185 (2006.01); H01P 5/18 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); G01N 24/10 (2006.01); G01R 33/30 (2006.01);
U.S. Cl.
CPC ...
G01R 33/60 (2013.01); G01R 31/318511 (2013.01); G01R 33/345 (2013.01); G01N 24/10 (2013.01); G01R 33/30 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01P 5/18 (2013.01);
Abstract

A ferromagnetic resonance (FMR) measurement system is disclosed with a waveguide transmission line (WGTL) connected at both ends to a mounting plate having an opening through which the WGTL is suspended. While the WGTL bottom surface contacts a portion of magnetic film on a whole wafer, a plurality of microwave frequencies is sequentially transmitted through the WGTL. Simultaneously, a magnetic field is applied to the contacted region thereby causing a FMR condition in the magnetic film. After RF output is transmitted through or reflected from the WGTL to a RF detector and converted to a voltage signal, effective anisotropy field, linewidth, damping coefficient, and/or inhomogeneous broadening are determined based on magnetic field intensity, microwave frequency and voltage output. A plurality of measurements is performed by controllably moving the WGTL or wafer and repeating the simultaneous application of microwave frequencies and magnetic field at additional preprogrammed locations on the magnetic film.


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