The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Nov. 22, 2019
Applied Materials, Inc., Santa Clara, CA (US);
Martin Jay Seamons, San Jose, CA (US);
Byung Kook Ahn, Gyeonggi-do, KR;
Jingmei Liang, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments described herein provide a method of forming a silicon-and-oxygen-containing layer having covalent Si—O—Si bonds by cross-linking terminal silanol groups. The method includes positioning a substrate in a chamber. The substrate has one or more trenches including a width of 10 nanometers (nm) or less, and an aspect ratio of 2:1 or greater. The aspect ratio is defined by a ratio of a depth to the width of the one or more trenches. A silicon-and-oxygen-containing layer is disposed over the one or more trenches. The silicon-and-oxygen-containing layer has terminal silanol groups. The substrate is heated, and the silicon-and-oxygen-containing layer is exposed to an ammonia or amine group-containing precursor distributed across a process volume.