The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 2021

Filed:

Jan. 02, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Wan-Chen Chen, Hsinchu, TW;

Yu-Hsiung Wang, Zhubei, TW;

Han-Yu Chen, Zhubei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 27/11575 (2017.01); H01L 49/02 (2006.01); H01L 27/1157 (2017.01); H01L 29/423 (2006.01); H01L 29/792 (2006.01); H01L 27/11573 (2017.01); H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11575 (2013.01); H01L 27/1157 (2013.01); H01L 27/11573 (2013.01); H01L 28/87 (2013.01); H01L 28/88 (2013.01); H01L 28/91 (2013.01); H01L 29/40117 (2019.08); H01L 29/42344 (2013.01); H01L 29/42352 (2013.01); H01L 29/66181 (2013.01); H01L 29/66833 (2013.01); H01L 29/792 (2013.01); H01L 29/945 (2013.01);
Abstract

The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a plurality of upper electrodes disposed over a substrate and a lower electrode disposed between the plurality of upper electrodes. A charge storage layer continuously extends from along a first side of the lower electrode to along a second side of the lower electrode opposing the first side. The charge storage layer separates the lower electrode from the plurality of upper electrodes and the substrate. A silicide is disposed over the lower electrode and the plurality of upper electrodes. The silicide has sidewalls that are laterally separated by a distance directly overlying a top of the charge storage layer.


Find Patent Forward Citations

Loading…