The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2021
Filed:
Dec. 19, 2019
Applicant:
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Inventor:
Xiaoliang Tang, Shanghai, CN;
Assignee:
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 27/11568 (2017.01); H01L 21/28 (2006.01); H01L 21/3213 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11568 (2013.01); H01L 21/32133 (2013.01); H01L 29/40117 (2019.08); H01L 29/42344 (2013.01); H01L 29/4916 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01); H01L 29/66833 (2013.01); H01L 29/792 (2013.01);
Abstract
The present invention discloses a SONOS memory in which two storage gates in a storage unit are self-aligned on the side of a selection gate, states of information stored in two storage gates in the same storage unit being opposite, the storage information of the storage unit being judged by comparing the magnitude of reading currents corresponding to two storage gates. The present invention further discloses a method for manufacturing a SONOS memory. The present invention can improve the reliability of the product and reduce the area of the device at the same time.