The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2021
Filed:
Apr. 11, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Harry-Hak-Lay Chuang, Zhubei, TW;
Tien-Wei Chiang, Taipei, TW;
Kuo-An Liu, Hsinchu, TW;
Chia-Hsiang Chen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
In some embodiments, the present application provides a memory device. The memory device includes a chip that includes a magnetic random access memory (MRAM) cell. A magnetic-field-shielding structure at least partially surrounding the chip including a multilayer stack. The multilayer stack includes a magnetic layer and a dielectric layer. A first magnetic region is located inside an inner surface of the magnetic field shielding structure and a second magnetic region is located immediately outside an outer surface of the magnetic field shielding structure. A magnetic field in the first magnetic region is less than a magnetic field in the second magnetic region.