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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11087977 B1

PDFFull Text
Date of Patent:
Aug. 10, 2021

Filed:

Aug. 29, 2017

P-type oxide semiconductor and method for manufacturing same

Applicants:

Flosfia Inc., Kyoto, JP;

Kyoto University, Kyoto, JP;

Inventors:

Shizuo Fujita, Kyoto, JP;

Kentaro Kaneko, Kyoto, JP;

Masaya Oda, Kyoto, JP;

Toshimi Hitora, Kyoto, JP;

Assignees:

FLOSFIA INC, Kyoto, JP;

KYOTO UNIVERSITY, Kyoto, JP;

Attorney:

Wenderoth, Lind & Ponack, L.L.P.

Primary Examiner:

Anthony Ho

Assistant Examiner:

Kevin Quinto

Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/40 (2006.01); H01L 29/872 (2006.01); H01L 33/26 (2010.01); H01L 29/24 (2006.01); C23C 16/448 (2006.01); H01L 29/78 (2006.01); H01L 29/808 (2006.01); H01L 29/778 (2006.01); H01L 29/737 (2006.01); H01L 29/739 (2006.01); H01L 29/812 (2006.01); H01L 29/12 (2006.01); H01L 29/04 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02565 (2013.01); C23C 16/40 (2013.01); C23C 16/448 (2013.01); C23C 16/4486 (2013.01); H01L 21/0262 (2013.01); H01L 29/04 (2013.01); H01L 29/12 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/737 (2013.01); H01L 29/739 (2013.01); H01L 29/7371 (2013.01); H01L 29/7395 (2013.01); H01L 29/778 (2013.01); H01L 29/7787 (2013.01); H01L 29/78 (2013.01); H01L 29/7827 (2013.01); H01L 29/808 (2013.01); H01L 29/8083 (2013.01); H01L 29/812 (2013.01); H01L 29/872 (2013.01); H01L 33/26 (2013.01); H01L 29/4236 (2013.01);
Abstract

A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution including iridium and a metal that is different from iridium and optionally contained; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base to form a crystal or a mixed crystal of a metal oxide including iridium.

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