The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2021
Filed:
Mar. 05, 2020
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventor:
Davide Mantegazza, Palo Alto, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 16/34 (2006.01); G11C 16/12 (2006.01); G11C 11/56 (2006.01); G11C 11/4091 (2006.01); G11C 11/408 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3431 (2013.01); G11C 11/4085 (2013.01); G11C 11/4091 (2013.01); G11C 11/5678 (2013.01); G11C 16/12 (2013.01); G11C 16/26 (2013.01);
Abstract
A high current fast read scheme can enable improved read disturb without negatively impacting read performance. In one example, a fast read scheme involves applying a higher current as soon as the cell thresholds. In one example, circuitry detects the threshold event and turns on a bypass control transistor to bypass the circuitry applying the read voltage to enable a higher voltage and therefore higher current as soon as possible. The read time can thus be decreased (or at least not increased) and read disturb improved.