The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2021
Filed:
Sep. 10, 2019
Applicant:
Elite Semiconductor Memory Technology Inc., Hsinchu, TW;
Inventor:
Chih-Hao Chen, New Taipei, TW;
Assignee:
ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/30 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3404 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01); G11C 16/344 (2013.01);
Abstract
A memory device includes a plurality of memory blocks and each memory block includes a plurality of columns of memory cells. Each column of memory cells is coupled to a corresponding bit line. Upon completion of a power-up sequence, detect if a current leakage of corresponding columns in a group of memory blocks is greater than a predetermined level. If the current leakage of the corresponding columns in the group of memory blocks is greater than the predetermined level, perform an over-erasure correction on the corresponding columns.