The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 2021

Filed:

Jul. 10, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

James S. Rehmeyer, Boise, ID (US);

George B. Raad, Boise, ID (US);

Debra M. Bell, Boise, ID (US);

Markus H. Geiger, Boise, ID (US);

Anthony D. Veches, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4094 (2006.01); G11C 11/408 (2006.01); G11C 11/4096 (2006.01); G11C 11/406 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4094 (2013.01); G11C 11/406 (2013.01); G11C 11/4085 (2013.01); G11C 11/4096 (2013.01);
Abstract

Methods, systems, and devices for phase charge sharing are described. In some memory systems or memory devices, one or more decoders may be used to bias access lines of a memory die. The decoders may transfer voltage or current between a first conductive line of the decoder and a second conductive line of the decoder via a shorting device. Transferring the voltage or current may be performed as part of or in association with an operation (e.g., an activate or pre-charge operation) to access one or more memory cells of the memory die. In some examples, the decoders may transfer voltage or current between a first conductive line of a decoder associated with a first refresh activity and a second conductive line of the decoder associated with a second refresh activity via a shorting device.


Find Patent Forward Citations

Loading…