The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 2021

Filed:

Sep. 23, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Yigwon Kim, Hwaseong-si, KR;

Sangjin Kim, Suwon-si, KR;

Heeyoung Go, Yongin-si, KR;

Heebom Kim, Hwaseong-si, KR;

Hoon Kim, Suwon-si, KR;

Hong-Seock Choi, Bucheon-si, KR;

Jinseok Heo, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01);
U.S. Cl.
CPC ...
G03F 1/24 (2013.01);
Abstract

Disclosed are photomasks, methods of fabricating the same, and methods of manufacturing semiconductor devices using the same. The photomask comprises a substrate including a pattern region and a peripheral region around the pattern region, a reflection layer on the pattern region and extending onto the peripheral region, an absorption structure on the reflection layer, and a dielectric pattern on the absorption structure on the peripheral region and exposing the absorption structure on the pattern region.


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Kim, Yigwon. (2021). Photomask, method of fabricating the same, and method of manufacturing semiconductor device using the same (U.S. Patent No. 11086210). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11086210

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