The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2021
Filed:
Nov. 28, 2018
Infineon Technologies Ag, Neubiberg, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Franz-Josef Niedernostheide, Hagen, DE;
Oana Julia Spulber, Neubiberg, DE;
Stephan Voss, Munich, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method of manufacturing a device in a semiconductor body includes forming a first field stop zone portion of a first conductivity type and a drift zone of the first conductivity type on the first field stop zone portion. An average doping concentration of the drift zone is smaller than 80% of that of the first field stop zone portion. The semiconductor body is processed at a first surface and thinned by removing material from a second surface. A second field stop zone portion of the first conductivity type is formed by implanting protons at one or more energies through the second surface. A deepest end-of-range peak of the protons is set in the first field stop zone portion at a vertical distance to a transition between the drift zone and first field stop zone portion in a range from 3 μm to 60 μm. The semiconductor body is annealed.