The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2021

Filed:

Mar. 23, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Alexander Reznicek, Troy, NY (US);

Praneet Adusumilli, Somerset, NJ (US);

Shanti Pancharatnam, Albany, NY (US);

Oscar Van Der Straten, Guilderland Center, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 29/66 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/91 (2013.01); H01L 23/5223 (2013.01); H01L 28/92 (2013.01); H01L 29/66181 (2013.01);
Abstract

Method and apparatus for a capacitive structure. The capacitive structure includes a material stack having a deep trench formed therein. The material stack includes alternating vertical and semi-ovoid sidewall surfaces. The material stack further includes alternating metallization layers and dielectric layers. At least one of the semi-spheroidal sidewall surfaces is formed in a sidewall of at least one of the dielectric layers in the deep trench. At least one of the vertical sidewall surfaces is a sidewall surface of at least one metallization layer in the deep trench.


Find Patent Forward Citations

Loading…