The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2021
Filed:
Dec. 10, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Chin-Shan Wang, Hsinchu, TW;
Yi-Miaw Lin, Taipei County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 23/522 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 21/027 (2006.01); H01L 23/528 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 21/0273 (2013.01); H01L 21/31116 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01); H01L 23/5221 (2013.01); H01L 28/60 (2013.01); H01L 29/41775 (2013.01); H01L 29/42372 (2013.01);
Abstract
The present disclosure provides a semiconductor structure, including: a transistor, including a gate structure and a source/drain structure; a source/drain contact, disposed over the source/drain structure; a gate contact, disposed over the gate structure; and a conductive bridge, disposed over the transistor, wherein the conductive bridge overlaps the source/drain contact from a top view perspective and electrically connecting the gate contact. The present disclosure also provides a method for forming the same.