The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2021

Filed:

Feb. 06, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Marko Milojevic, Boise, ID (US);

John A. Smythe, III, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/10 (2006.01); H01L 21/321 (2006.01); H01L 21/3205 (2006.01); H01L 21/768 (2006.01); H01L 27/108 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/321 (2013.01); H01L 21/32051 (2013.01); H01L 21/76886 (2013.01); H01L 27/10829 (2013.01); H01L 28/65 (2013.01);
Abstract

Systems, apparatuses, and methods related to reduction of crystal growth resulting from annealing a conductive material are described. An example apparatus includes a conductive material selected to have an electrical resistance that is reduced as a result of annealing. A stabilizing material may be formed over a surface of the conductive material. The stabilizing material may be selected to have properties that include stabilization of the reduced electrical resistance of the conductive material and reduction of a degree of freedom of crystal growth relative to the surface resulting from recrystallization of the conductive material during the annealing.


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