The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2021
Filed:
Nov. 18, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Jian-Jou Lian, Tainan, TW;
Yao-Wen Hsu, New Taipei, TW;
Neng-Jye Yang, Hsinchu, TW;
Li-Min Chen, Zhubei, TW;
Chia-Wei Wu, Miaoli County, TW;
Kuan-Lin Chen, New Taipei, TW;
Kuo Bin Huang, Jhubei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); G03F 7/32 (2006.01); G03F 7/20 (2006.01); G03F 7/09 (2006.01); H01L 21/033 (2006.01); G03F 7/095 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0273 (2013.01); G03F 7/094 (2013.01); G03F 7/20 (2013.01); G03F 7/32 (2013.01); H01L 21/0228 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/31111 (2013.01); G03F 7/095 (2013.01); H01L 21/30608 (2013.01);
Abstract
A semiconductor device and method of manufacture are provided. After a patterning of a middle layer, the middle layer is removed. In order to reduce or prevent damage to other underlying layers exposed by the patterning of the middle layer and intervening layers, an inhibitor is included within an etching process in order to inhibit the amount of material removed from the underlying layers.