The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2021

Filed:

Mar. 06, 2019
Applicant:

Hitachi High-tech Corporation, Tokyo, JP;

Inventors:

Norihiko Ikeda, Tokyo, JP;

Naoki Yasui, Tokyo, JP;

Kazuya Yamada, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32678 (2013.01); H01J 37/32201 (2013.01); H01J 37/32311 (2013.01); H01J 37/32935 (2013.01); H01L 21/3065 (2013.01); H01J 2237/3341 (2013.01);
Abstract

A plasma processing apparatus includes a processing chamberwhere a waferis processed using plasma, a radio frequency power supplyconfigured to supply a radio frequency power for generating the plasma, a mechanism configured to form a magnetic field for forming ECR and to control a magnetic flux density thereof, and a sample stageon which the waferis placed. The plasma processing apparatus further includes a control unitconfigured to, based on image data of the plasma, monitor a height of ECR which is electron cyclotron resonance generated by an interaction between the radio frequency power and the magnetic field, and to control a frequency of the radio frequency power such that the monitored ECR height becomes a predetermined height.


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