The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2021
Filed:
May. 16, 2019
Applicant:
Sandisk Technologies Llc, Addison, TX (US);
Inventors:
Xiang Yang, Santa Clara, CA (US);
Gerrit Jan Hemink, San Ramon, CA (US);
Assignee:
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 11/56 (2006.01); G11C 16/10 (2006.01); H01L 27/11565 (2017.01); G11C 16/04 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
G11C 16/3463 (2013.01); G11C 11/5671 (2013.01); G11C 16/10 (2013.01); G11C 16/3459 (2013.01); G11C 16/0483 (2013.01); H01L 27/11565 (2013.01); H01L 27/11582 (2013.01);
Abstract
A non-volatile storage system includes a mechanism to compensate for over programming during the programming process. That is, after the programming process starts for a set of data and target memory cells, and prior to the programming process completing for the set of data and the target memory cells, the system determines whether a first group of the memory cells has more than a threshold number of over programmed memory cells. If so, then the system adjusts programming of a second group of memory cells to reduce the number of programming errors.