The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
May. 01, 2020
Csmc Technologies Fab2 Co., Ltd., Jiangsu, CN;
Tse-Huang Lo, Taiwan, CN;
CSMC TECHNOLOGIES FAB2 CO., LTD., Wuxi New District, CN;
Abstract
An insulated gate bipolar transistor includes a substrate; a first conductivity type base disposed on the substrate and having a first trench; a first conductivity type buffer region disposed in the first conductivity type base; a collector doped region having a second conductivity type and disposed in the first conductivity type base; a second conductivity type base to which the first trench extends downwardly; a gate oxide layer disposed on an inner surface of the first trench; a polysilicon gate disposed inside the gate oxide layer; an emitter doped region having a first conductivity type and disposed in the second conductivity type base and under the first trench; a conductive plug extending downwardly from above the first trench and contacting the second conductivity type base; and an insulating oxide layer filled in the first trench, the insulating oxide layer insulating and isolating the polysilicon gate from the emitter doped region.
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