The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
Apr. 25, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Chi-Wen Liu, Hsinchu, TW;
Chao-Hsiung Wang, Hsin-Chu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 29/66 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66181 (2013.01); H01L 28/92 (2013.01); H01L 29/94 (2013.01); H01L 29/945 (2013.01);
Abstract
A three-dimensional (3D) capacitor includes a semiconductor substrate; one or more fins extending from the semiconductor substrate; an insulator material between each of the one or more fins; a dielectric layer over a first portion of the one or more fins and over the insulator material; a first electrode over the dielectric layer; spacers on sidewalls of the first electrode; and a second electrode over a second portion of the one or more fins and over the insulator material, wherein the first and second portions are different.